ROF Si adjustable gain photodetector Silicon Photodetector
Feature
l Spectral range: 320nm~1100nm
l 3dB bandwidth: up to 11MHz
l Maximum gain setting: 4.75×106 V/A (high-impedance load)
l Low noise
l Spatial optical coupling input, fiber coupling optional
Application
l Weak light detection
l Fiber optic sensing system
l Space optical communication
Ordering information
|
Model Parameter |
ROF-PR-11M-B |
ROF-PR-13M-A |
|
Response frequency |
DC-11MHz |
DC-13MHz |
|
Type |
Silicon(Si) |
Indium Gallium Arsenide(InGaAs) |
|
Sensitivity to light 1 |
320nm~1100nm |
900nm~1700nm |
|
Photosensitive area |
Ø9.8 mm (75.4 mm2 ) |
Ø1.0 mm (0.8 mm2 ) |
Note 1: Approximate value; The actual wavelength value may vary
Parameters
|
Performance Specifications 2 (KG-PR-11M-B) |
|||
|
0dB setting |
40dB setting |
||
| Gain (high resistance>5k Ω) |
1.50 x 103 V/A ±2% |
Gain (high resistance>5k Ω) |
1.50 x 105 V/A ±2% |
| Gain (50 Ω) |
0.75 x 103 V/A ±2% |
Gain (50 Ω) |
0.75 x 105 V/A ±2% |
| 3dB bandwidth 3 |
11 MHz |
3dB bandwidth |
150K |
| Noise (RMS) |
400uV |
Noise (RMS) |
500uV |
| bias |
±8 mV (Typ.) ±20mV (Max.) |
bias |
±8 mV (Typ.) ±20mV (Max.) |
|
10dB setting |
50dB setting |
||
| Gain (high resistance>5k Ω) |
4.75 x 103 V/A ±2% |
Gain (high resistance>5k Ω) |
4.75 x 105 V/A ±2% |
| Gain (50 Ω) |
2.38 x 103 V/A ±2% |
Gain (50 Ω) |
2.38 x 105 V/A ±2% |
| 3dB bandwidth |
1.4 MHz |
3dB bandwidth |
50K |
| Noise (RMS) |
350uV |
Noise (RMS) |
520 uV |
| bias |
±8 mV (Typ.) ±20mV (Max.) |
bias |
±8 mV (Typ.) ±20mV (Max.) |
|
20dB setting |
60dB setting |
||
| Gain (high resistance>5k Ω) |
1.50 x 104 V/A ±2% |
Gain (high resistance>5k Ω) |
1.50 x 106 V/A ±2% |
| Gain (50 Ω) |
0.75 x 104 V/A ±2% |
Gain (50 Ω) |
0.75 x 106 V/A ±2% |
| 3dB bandwidth |
1.0MHz |
3dB bandwidth |
20K |
| Noise (RMS) |
380uV |
Noise (RMS) |
760 uV |
| bias |
±8 mV (Typ.) ±20mV (Max.) |
bias |
±8 mV (Typ.) ±20mV (Max.) |
|
30dB setting |
70dB setting |
||
| Gain (high resistance>5k Ω) |
4.75 x 104 V/A ±2% |
Gain (high resistance>5k Ω) |
4.75 x 106 V/A ±2% |
| Gain (50 Ω) |
2.38 x 104 V/A ±2% |
Gain (50 Ω) |
2.38 x 106 V/A ±2% |
| 3dB bandwidth |
400K |
3dB bandwidth |
10K |
| Noise (RMS) |
380uV |
Noise (RMS) |
1.43mV |
| bias |
±8 mV (Typ.) ±20mV (Max.) |
bias |
±8 mV (Typ.) ±20mV (Max.) |
Note 2: ROF-PR-11M-B has a 50 Ω series terminating resistor (i.e. connected in series with the amplifier output). This forms a voltage divider with any load impedance (such as a 50 Ω load splitting the signal in half).
Note 3: Conduct the test at a wavelength of 850nm. For near-infrared wavelengths, the rise time of photodiode components will become slower, which may limit the effective bandwidth of the amplification detector
General Parameters
|
Project |
sym |
value |
|
Detector type |
- |
Si |
|
Photosensitive surface |
- |
Ø9.8 mm (75.4 mm2 ) |
|
Peak wavelength |
λp |
960 nm (Typ.) |
|
Peak response |
Â( λ p) |
0.72 A/W (Typ.) |
|
Output impedance |
- |
50Ω |
|
Maximum output current amplitude |
Imax |
100mA |
|
Maximum output voltage amplitude |
Vmax |
10.00V @ high impedance 5.00V@50 Ω load |
|
Load range |
- |
>50 Ω |
|
Range of gain adjustment |
- |
0dB~70dB |
|
Gain step |
- |
10 dB |
|
Power switch |
- |
side |
|
Gain switch |
- |
8th gear |
|
Output |
- |
SMA (DC Coupling) |
|
Product dimensions |
- |
66.6mm*52.2mm*22.4mm |
|
PD surface depth 4 |
- |
6.1mm |
|
Weight (excluding accessories) |
- |
70g |
|
Accessories |
- |
SM1T1 coupling, SM1RR retaining ring |
|
Power supply |
- |
AC-DC ± 12V adapter |
|
Power supply wattage |
- |
6 W 100V/120V/230V,50-60 Hz |
Note 4: The approximate height from the surface of the housing structure to the surface of the photodiode may result in installation errors in practice.
Limiting condition
|
Parameter |
sym |
Unit |
Min |
Typical |
Max |
| Input optical power |
Pin |
mW |
- |
- |
25 |
| Working Voltage |
Vop |
V |
±10.8 |
±12 |
±13.2 |
| Operating Temperature |
Top |
ºC |
-10 |
- |
60 |
| Storage temperature |
Tst |
ºC |
-40 |
- |
85 |
| humidity |
RH |
% |
5 |
- |
90 |
Curve
Characteristic curve
ROF-PR-11M-B Sensitivity response diagram
Package size(mm)
About Us
Rofea Optoelectronics exhibits a wide range of electro-optic products including modulators, photodetectors, laser sources, dfb lasers, optical amplifiers, EDFAs, SLD lasers, QPSK modulation, pulsed lasers, photodetectors, balanced photodetectors, semiconductor lasers, laser Drivers, fiber couplers, pulsed lasers, fiber amplifiers, optical power meters, broadband lasers, tunable lasers, optical delays, electro-optic modulators, photodetectors, laser diode drivers, fiber amplifiers, erbium-doped fiber amplifiers, and source lasers.
We also provide custom modulators, including 1*4 array phase modulators, ultra-low Vpi and ultra-high extinction ratio modulators, which are specially designed for universities and research institutes.
These products feature electro-optic bandwidth up to 40 GHz, wavelength range from 780 nm to 2000 nm, low insertion loss, low Vp, and high PER, making them suitable for a variety of analog RF links and high-speed communication applications.
Rofea Optoelectronics offers a product line of commercial Electro-optic modulators, Phase modulators, Intensity modulator, Photodetectors, Laser light sources, DFB lasers,Optical amplifiers, EDFA, SLD laser, QPSK modulation, Pulse laser, Light detector, Balanced photodetector, Laser driver, Fiber optic amplifier, Optical power meter, Broadband laser, Tunable laser, Optical detector, Laser diode driver, Fiber amplifier. We also provide many particular modulators for customization, such as 1*4 array phase modulators, ultra-low Vpi, and ultra-high extinction ratio modulators, primarily used in universities and institutes.
Hope our products will be helpful to you and your research.
