Rof EOM modulator 1550nm Phase Modulator thin film lithium niobate modulator

Short Description:

The LiNbO3 phase modulator is widely used in high-speed optical communication system, laser sensing and ROF systems because of well electro-optic effect. The R-PM series based on Ti-diffused and APE technology, has stable physical and chemical characteristics, which can meet requirement of the most applications in laboratory experiments and industrial systems.

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Product Detail

Rofea Optoelectronics offer Optical and photonics Electro-optic modulators products

Product Tags

Feature

■ RF bandwidth up to 40 GHz

■ Half wave voltage low to 3 V

■ Insertion loss as low as 4.5dB

■ Small device size

Rof EOM modulator 40GHz Phase Modulator thin film lithium niobate modulator

Parameter

Category	Argument	Sym	Uni	Aointer
Optical performance (@25°C)	Operating wavelength (*)	λ	nm	~1550
	Optical return loss	ORL	dB	≤ -27
	Optical insertion loss (*)	IL	dB	MAX：5.5 Typ：4.5
Electrical properties (@25°C)	3 dB electro-optical bandwidth (from 2 GHz	S21	GHz	X1: 2	X1: 4
				MIN：18 Typ：20	MIN：36 Typ：40
	Rf half wave voltage (@50 kHz)	V_π	V	MAX：3.5 Typ：3.0
	Rf return loss (2 GHz to 40 GHz)	S11	dB	≤ -10
Working condition	Operating temperature	TO	°C	-20~70

* customizable

Damage threshold

Argument	Sym	Selectable	MIN	MAX	Uni
Rf input power	Sin	X2: 4	-	18	dBm
Rf input power	Sin	X2: 5	-	29	dBm
Rf input swing voltage	Vpp	X2: 4	-2.5	+2.5	V
Rf input swing voltage	Vpp	X2: 5	-8.9	+8.9	V
Rf input RMS voltage	Vrms	X2: 4	-	1.78	V
Rf input RMS voltage	Vrms	X2: 5	-	6.30	V
Storage temperature	Pin	-	-	20	dBm
Optical input power	Ts	-	-40	85	℃
Relative humidity (no condensation)	RH	-	5	90	%

If the device exceeds the maximum damage threshold, it will cause irreversible damage to the device, and this type of device damage is not covered by the maintenance service.